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By 2023, the Static Random-Access Memory (SRAM) industry had grown to a value of 0.25 billion USD. During the forecast period (2024–2031), the static random-access memory (SRAM) market is expected to expand from USD 0.52225 billion in 2024 to USD 0.73988 billion in 2031, representing a compound yearly growth rate (CAGR) of 6.45%. The need for various building blocks, which are boosted by technological breakthroughs and improved infrastructure, has been directly affected by the growth of this industry. These factors are the primary drivers of market growth.
Data is stored in a static form via a static random access memory. With the use of two cross-coupled inverters, static random access memory can store a single bit of data on four transistors. A single memory bit can be stored using six MOFSETs, or Metal Oxide Semiconductor Field Effect Transistors. Since static random access memory is more costly than dynamic random access memories (DRAMs), it is typically reserved for applications requiring exceptional efficiency and performance. Rising expectations for faster cache memories and new high-performance network applications are propelling the demand for static random access memory on a global scale. Furthermore, the static random access memory market will experience more chances due to the increased implementation of this technology in mobile phones. The static random access memory market has several obstacles, the most significant of which are increased cell size, higher design costs, and worse stability under hostile conditions.
Static Random Access Memory (SRAM) can be either synchronous or asynchronous, depending on whether or not the clock needs to be refreshed. Asynchronous RAM, in contrast to several other forms of random-access memory (RAM), including synchronous dynamic random-access memory (SDRAM) and dynamic random-access memory (DRAM), has a much lower voltage and a much lower access time. On top of that, fewer chip enable (E) pins are needed. Similar to regular DRAM, asynchronous SRAM can be accessed by assigning one pin to receive data and another to deliver it.
Data is stored in the form of electrical charges in synchronous SRAM (SRAM), an integrated circuit memory. For every bit, it has a flip-flop to store it. Compared to asynchronous RAM, synchronous SRAM can function at significantly higher rates; however, in order to achieve this speed improvement, synchronous SRAM often draws more power and uses more logic gates. It boosts system performance by lowering access times by letting microprocessors access numerous memory rows concurrently.
The demand for various electronic components has been steadily rising across various industries, including consumer electronics, industrial and scientific, automotive, aerospace, and life sciences. These components include microcontrollers, embedded systems, programmable devices, and application-specific integrated circuits. A number of components utilized as foundational elements of such systems have seen a direct impact on demand due to the expansion of this industry, new technologies, and better infrastructure. The expansion of the electronics sector has had an effect on SRAM and other comparable segments. For starters, SRAMs interface with DRAMs and the CPU, acting as cache memory. The majority of SRAM makers have only gone as far as the Level 3 cache. The use of High Bandwidth Memory (HBM) as a L4 cache was patented by AMD. Since a L4 cache on a chip has not been introduced yet, the concept of utilization is still up for debate amongst industry experts.
Experts in the field agree that SRAM is still very much needed today. The quality of Fin Field Effect Transistors (FinFETs) has not changed, even for chips with a size of 10 nm or less. Companies are putting a lot of money into making their products more energy efficient and offering devices with lower power usage. SRAM is commonly used by memory-intensive high-performance and real-time applications. Compared to SRAM, static random-access memory (DRAM) consumes less power. Networking gear like switches and routers often use SRAMs to keep performance constant, even while under heavy load or experiencing breakdowns.
Because of its many advantages, SRAM is the material of choice for aeronautical applications. When compared to other forms of memory, including dynamic random access memories (DRAMs) or magnetic storage devices, they have several advantages, such as lower power consumption, higher processing speed, and greater dependability. In contrast to ECC memories, which necessitate battery backup, SRAM may function without one, making it an attractive choice for use in avionics applications. Incinertial guidance system (IGS) applications also make use of SRAM.
Report Coverage
Global Static Random Access Memory research report categorizes the market for global based on various segments and regions, forecasts revenue growth, and analyzes trends in each submarket. Global Static Random Access Memory report analyses the key growth drivers, opportunities, and challenges influencing the global market. Recent market developments and Static Random Access Memory competitive strategies such as expansion, product launch and development, partnership, merger, and acquisition have been included to draw the competitive landscape in the market. The report strategically identifies and profiles the key Static Random Access Memory market players and analyses their core competencies in each global market sub-segments.
Key Points Covered in the Report
Competitive Environment:
The research provides an accurate study of the major organisations and companies operating in the global Static Random Access Memory market, along with a comparative evaluation based on their product portfolios, corporate summaries, geographic reach, business plans, Static Random Access Memory market shares in specific segments, and SWOT analyses. A detailed analysis of the firms' recent news and developments, such as product development, inventions, joint ventures, partnerships, mergers and acquisitions, strategic alliances, and other activities, is also included in the study. This makes it possible to assess the level of market competition as a whole.
List of Major Market Participants
Cypress, Renesas, ISSI, GSI, Renesas Electronics Corporation, Samsung, IDT, ON Semiconductor, Amic Technology, Lyontek
Primary Target Market
Market Segment:
This study forecasts global, regional, and country revenue from 2019 to 2031. INFINITIVE DATA EXPERT has segmented the global Static Random Access Memory market based on the below-mentioned segments:
Global Static Random Access Memory Market, By Type
nvSRAM
Asynchronous SRAM
Synchronous SRAM
Low Power SRAM
Radiation Hardened SRAM
Global Static Random Access Memory market, By Application
Networking
Aerospace
Medical
Automotive Electronics
Consumer Electronics
Industrial Automation
Telecommunications
Others
Global Static Random Access Memory Market, By Capacity
64 kb
256 kb
1 Mb
4 Mb
16 Mb
And Above
Global Static Random Access Memory market, Regional Analysis
Data is stored in a static form via a static random access memory. With the use of two cross-coupled inverters, static random access memory can store a single bit of data on four transistors. A single memory bit can be stored using six MOFSETs, or Metal Oxide Semiconductor Field Effect Transistors. Since static random access memory is more costly than dynamic random access memories (DRAMs), it is typically reserved for applications requiring exceptional efficiency and performance. Rising expectations for faster cache memories and new high-performance network applications are propelling the demand for static random access memory on a global scale. Furthermore, the static random access memory market will experience more chances due to the increased implementation of this technology in mobile phones. The static random access memory market has several obstacles, the most significant of which are increased cell size, higher design costs, and worse stability under hostile conditions.
Static Random Access Memory (SRAM) can be either synchronous or asynchronous, depending on whether or not the clock needs to be refreshed. Asynchronous RAM, in contrast to several other forms of random-access memory (RAM), including synchronous dynamic random-access memory (SDRAM) and dynamic random-access memory (DRAM), has a much lower voltage and a much lower access time. On top of that, fewer chip enable (E) pins are needed. Similar to regular DRAM, asynchronous SRAM can be accessed by assigning one pin to receive data and another to deliver it.
Data is stored in the form of electrical charges in synchronous SRAM (SRAM), an integrated circuit memory. For every bit, it has a flip-flop to store it. Compared to asynchronous RAM, synchronous SRAM can function at significantly higher rates; however, in order to achieve this speed improvement, synchronous SRAM often draws more power and uses more logic gates. It boosts system performance by lowering access times by letting microprocessors access numerous memory rows concurrently.
The demand for various electronic components has been steadily rising across various industries, including consumer electronics, industrial and scientific, automotive, aerospace, and life sciences. These components include microcontrollers, embedded systems, programmable devices, and application-specific integrated circuits. A number of components utilized as foundational elements of such systems have seen a direct impact on demand due to the expansion of this industry, new technologies, and better infrastructure. The expansion of the electronics sector has had an effect on SRAM and other comparable segments. For starters, SRAMs interface with DRAMs and the CPU, acting as cache memory. The majority of SRAM makers have only gone as far as the Level 3 cache. The use of High Bandwidth Memory (HBM) as a L4 cache was patented by AMD. Since a L4 cache on a chip has not been introduced yet, the concept of utilization is still up for debate amongst industry experts.
Experts in the field agree that SRAM is still very much needed today. The quality of Fin Field Effect Transistors (FinFETs) has not changed, even for chips with a size of 10 nm or less. Companies are putting a lot of money into making their products more energy efficient and offering devices with lower power usage. SRAM is commonly used by memory-intensive high-performance and real-time applications. Compared to SRAM, static random-access memory (DRAM) consumes less power. Networking gear like switches and routers often use SRAMs to keep performance constant, even while under heavy load or experiencing breakdowns.
Because of its many advantages, SRAM is the material of choice for aeronautical applications. When compared to other forms of memory, including dynamic random access memories (DRAMs) or magnetic storage devices, they have several advantages, such as lower power consumption, higher processing speed, and greater dependability. In contrast to ECC memories, which necessitate battery backup, SRAM may function without one, making it an attractive choice for use in avionics applications. Incinertial guidance system (IGS) applications also make use of SRAM.
Report Coverage
Global Static Random Access Memory research report categorizes the market for global based on various segments and regions, forecasts revenue growth, and analyzes trends in each submarket. Global Static Random Access Memory report analyses the key growth drivers, opportunities, and challenges influencing the global market. Recent market developments and Static Random Access Memory competitive strategies such as expansion, product launch and development, partnership, merger, and acquisition have been included to draw the competitive landscape in the market. The report strategically identifies and profiles the key Static Random Access Memory market players and analyses their core competencies in each global market sub-segments.
| REPORT ATTRIBUTES | DETAILS |
|---|---|
| Study Period | 2017-2031 |
| Base Year | 2023 |
| Forecast Period | 2023-2031 |
| Historical Period | 2017-2021 |
| Unit | Value (USD Billion) |
| Key Companies Profiled | Cypress, Renesas, ISSI, GSI, Renesas Electronics Corporation, Samsung, IDT, ON Semiconductor, Amic Technology, Lyontek |
| Segments Covered | • By Product |
| Customization Scope | Free report customization (equivalent to up to 3 analyst working days) with purchase. Addition or alteration to country, regional & segment scope |
Key Points Covered in the Report
- Market Revenue of Static Random Access Memory Market from 2021 to 2031.
- Market Forecast for Static Random Access Memory Market from 2021 to 2031.
- Regional Market Share and Revenue from 2021 to 2031.
- Country Market share within region from 2021 to 2031.
- Key Type and Application Revenue and forecast.
- Company Market Share Analysis, Static Random Access Memory competitive scenario, ranking, and detailed company
profiles. - Market driver, restraints, and detailed COVID-19 impact on Static Random Access Memory
Market
Competitive Environment:
The research provides an accurate study of the major organisations and companies operating in the global Static Random Access Memory market, along with a comparative evaluation based on their product portfolios, corporate summaries, geographic reach, business plans, Static Random Access Memory market shares in specific segments, and SWOT analyses. A detailed analysis of the firms' recent news and developments, such as product development, inventions, joint ventures, partnerships, mergers and acquisitions, strategic alliances, and other activities, is also included in the study. This makes it possible to assess the level of market competition as a whole.
List of Major Market Participants
Cypress, Renesas, ISSI, GSI, Renesas Electronics Corporation, Samsung, IDT, ON Semiconductor, Amic Technology, Lyontek
Primary Target Market
- Market Players of Static Random Access Memory
- Investors
- End-users
- Government Authorities
- Consulting And Research Firm
- Venture capitalists
- Third-party knowledge providers
- Value-Added Resellers (VARs)
Market Segment:
This study forecasts global, regional, and country revenue from 2019 to 2031. INFINITIVE DATA EXPERT has segmented the global Static Random Access Memory market based on the below-mentioned segments:
Global Static Random Access Memory Market, By Type
nvSRAM
Asynchronous SRAM
Synchronous SRAM
Low Power SRAM
Radiation Hardened SRAM
Global Static Random Access Memory market, By Application
Networking
Aerospace
Medical
Automotive Electronics
Consumer Electronics
Industrial Automation
Telecommunications
Others
Global Static Random Access Memory Market, By Capacity
64 kb
256 kb
1 Mb
4 Mb
16 Mb
And Above
Global Static Random Access Memory market, Regional Analysis
- Europe: Germany, Uk, France, Italy, Spain, Russia, Rest of Europe
- The Asia Pacific: China,Japan,India,South Korea,Australia,Rest of Asia Pacific
- South America: Brazil, Argentina, Rest of South America
- Middle East & Africa: UAE, Saudi Arabia, Qatar, South Africa, Rest of Middle East & Africa
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